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US 7,067,925 B2Granted
Barrier film integrity on porous low k dielectrics by application of a hydrocarbon plasma treatment
AssigneeIntel Corporation
InventorThomas Joseph Abell
Life of this patent
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Abstract
A method for treating a dielectric material using hydrocarbon plasma is described, which allows for thinner films of barrier material to be used to form a robust barrier.
Claims7
An interconnect structure comprising:
- vias and trenches defined by an interlayer dielectric disposed above an underlying layer;
- a carbon rich polymer layer is disposed on the surface of the interlayer dielectric, so as to form a liner in line the vias and the trenches;
- a carbide layer over the liner;
- a barrier layer disposed over the carbide layer;
- a copper alloy over the barrier layer, filling the vias and the trenches;
- and
- the surface of the copper coplanar with the surface of the interlayer dielectric layer.
4 more elements
Dependencies are inferred from the claim text.