Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMasahiko Hasunuma, Akitsugu Hatazaki
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor device including: a semiconductor substrate; at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of the semiconductor substrate by a lacking portion that extends along the four corners; and a second insulating film covering a side face of the entire layer of the first insulating film in the lacking portion on a center side of the semiconductor substrate and having a relative dielectric constant of over 3.8.
Claims25
A semiconductor device comprising:
- a semiconductor substrate having a Periphery and a center;
- at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of the semiconductor substrate by a lacking portion that extends alone the four corners;
- a second insulating film covering a side face of the entire layer of the first insulating film in the lacking portion on a side of the center of the semiconductor substrate and having a relative dielectric constant of over 3.8;
- and
- a conductor film layered on the second insulating film in the lacking portion.
A semiconductor device comprising:
- a semiconductor substrate having a periphery and a center;
- at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of the semiconductor substrate by a lacking portion that extends along the four corners;
- a second insulating film covering a top face of the first insulating film and a side face of the entire layer of the first insulating film in the lacking portion on a side of the center of the semiconductor substrate and having a relative dielectric constant of over 3.8;
- and
- a conductor pattern passing through the second insulating film on the top face of the first insulating film.
A semiconductor device comprising:
- a semiconductor substrate;
- at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of a semiconductor chip by a lacking portion that extends along the four corners;
- a second insulating film formed in the lacking portion and on the first insulating film and having a relative dielectric constant of over 3.8;
- and
- a conductor film layered on the second insulating film in the lacking portion.
Dependencies are inferred from the claim text.