Semiconductor device and method of fabricating the same
AssigneeElpida Memory, Inc.
InventorYoshitaka Ishihara
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an upper wiring layer, a lower wiring layer, an electrically insulating layer sandwiched between the upper and lower wiring layers, a tungsten plug formed in a through-hole formed through the electrically insulating layer, for electrically connecting the upper and lower wiring layers to each other, a titanium film covering an inner surface of the through-hole and a surface of the electrically insulating layer therewith, a first titanium nitride film entirely covering the titanium film therewith, and a second titanium nitride film covering the first titanium nitride film and a surface of the tungsten plug therewith.
Claims10
A semiconductor device comprising:
- (a) an upper wiring layer;
- (b) a lower wiring layer;
- (c) a plug electrically connecting said upper and lower wiring layers to each other;
- (d) a barrier metal for said plug, having a multi-layered structure comprised of a titanium film and a first titanium nitride film;
- and
- (e) a second titanium nitride film formed directly on both said plug and said first titanium nitride film.
A semiconductor device comprising:
- (a) an upper wiring layer;
- (b) a lower wiring layer;
- (c) an electrically insulating layer sandwiched between said upper and lower wiring layers;
- (d) a plug formed in a through-hole formed throughout said electrically insulating layer, for electrically connecting said upper and lower wiring layers to each other;
- (e) a titanium film covering an inner surface of said through-hole and a surface of said electrically insulating layer therewith;
- (f) a first titanium nitride film entirely covering said titanium film therewith;
- and
- (g) a second titanium nitride film directly covering said first titanium nitride film and a surface of said plug therewith.
Dependencies are inferred from the claim text.