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US 7,067,901 B2Granted
Semiconductor devices including protective layers on active surfaces thereof
AssigneeMicron Technology, Inc.
InventorsWarren M. Farnworth, Alan G. Wood
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsWarren M. Farnworth, Alan G. Wood
Estimating the term…
A stereolithographic method of applying material to form a protective layer on a preformed semiconductor die with a high degree of precision, either in the wafer stage, when attached to a lead frame, or to a singulated, bare die. The method is computerized and may utilize a machine vision feature to provide precise die-specific alignment. A semiconductor die may be provided with a protective structure in the form of at least one layer or segment of dielectric material having a controlled thickness or depth and a very precise boundary. The layer or segment may include precisely sized, shaped and located apertures through which conductive terminals, such as bond pads, on the surface of the die may be accessed. A plurality of discrete protective structures may be formed on corresponding semiconductor devices that are carried by a large-scale semiconductor substrate. Dielectric material may also be employed as a structure to mechanically reinforce the die-to-lead frame attachment.
A semiconductor wafer including a plurality of semiconductor device components, a protective element on selected portions of each semiconductor device component of the plurality, the protective element on one of the plurality of semiconductor device components including a plurality of adjacent, mutually adhered regions comprising the same material.
A semiconductor device component, comprising:
A semiconductor wafer including a plurality of semiconductor device components, a protective element on selected portions of each semiconductor device component of the plurality, conductors of at least some semiconductor device components of the plurality of semiconductor device components being exposed through at least some protective elements, the protective element on one of the plurality of semiconductor device components being substantially discontinuous from protective elements on adjacent semiconductor device components and comprising a plurality of adjacent, mutually adhered regions comprising the same material.
Dependencies are inferred from the claim text.