Semiconductor integrated circuit device
AssigneeSanyo Electric Co., Ltd.
InventorsRyo Kanda, Shigeaki Okawa, Kazuhiro Yoshitake
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Abstract
A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small signal section. The substrate and the first epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.
Claims12
A semiconductor integrated circuit device comprising:
- a plurality of opposite-conductivity-type epitaxial layers deposited on a single-conductivity-type semiconductor substrate;
- and
- dividing regions dividing the epitaxial layers into a plurality of island regions comprising an island region incorporating a driver device for driving a motor and at least another island region incorporating a control device for controlling the driver device, wherein
- the island region having the control device has an opposite-conductivity-type embedded diffusion region between the substrate and a first epitaxial layer deposited on an upper surface of the substrate and a grounded single-conductivity-type embedded diffusion region on the first epitaxial layer.
A semiconductor integrated circuit device comprising:
- a plurality of opposite-conductivity-type epitaxial layers deposited on a single-conductivity-type semiconductor substrate;
- and
- dividing regions dividing the epitaxial layers into a plurality of island regions comprising at least an island region incorporating a driver device for driving a motor and at least another island region incorporating a control device for controlling the driver device, wherein
- the island region having the control device has an opposite-conductivity-type embedded diffusion region and a first single-conductivity-type embedded diffusion region between the substrate and a first epitaxial layer deposited on an upper surface of the substrate, the first embedded diffusion region being led out from at least an upper surface of the opposite-conductivity-type embedded diffusion region and being connected to a grounded second single-conductivity-type embedded diffusion region.
A semiconductor integrated circuit device comprising:
- a plurality of opposite-conductivity-type epitaxial layers deposited on a single-conductivity-type semiconductor substrate;
- and
- dividing regions dividing the substrate and the epitaxial layers into a plurality of island regions comprising at least an island region incorporating a driver device for driving a motor and at least another island region incorporating a control device for controlling the driver device, wherein
- the island region having the driver device has an opposite-conductivity-type embedded diffusion region between the substrate and a first epitaxial layer deposited on an upper surface of the substrate and a grounded single-conductivity-type embedded diffusion region on the first epitaxial layer.
A semiconductor integrated circuit device comprising:
- a plurality of opposite-conductivity-type epitaxial layers deposited on a single-conductivity-type semiconductor substrate;
- and
- dividing regions dividing the epitaxial layers into a plurality of island regions comprising at least an island region incorporating a driver device for driving a motor and at least another island region incorporating a control device for controlling the driver device, wherein
- the island region having the driver device has an opposite-conductivity-type embedded diffusion region and a first single-conductivity-type embedded diffusion region between the substrate and a first epitaxial layer deposited on an upper surface of the substrate, the first embedded diffusion region being led out from at least an upper surface of the opposite-conductivity-type embedded diffusion region and being connected to a grounded second single-conductivity-type embedded diffusion region.
Dependencies are inferred from the claim text.