Microelectronic fabrication having edge passivated bond pad integrated with option selection device access aperture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJuei-Kuo Wu, Yi-Lang Wu, Lin-June Wu, Dian-Hau Chen
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Abstract
Within an option selection device structure and a method for fabrication thereof there is formed a terminal metal layer and an option selection device at a co-planar level over a microelectronic substrate. The option selection device is passivated with: (1) a terminal metal passivation layer having an etch stop layer within its thickness; and (2) a bond pad passivation layer. There is simultaneously also formed through the bond pad passivation layer: (1) a via which accesses a bond pad formed contacting the terminal metal layer; and (2) an aperture over the option selection device which stops at the etch stop layer.
Claims20
An option selection device structure comprising:
- a substrate;
- a terminal metal layer and an option selection device at a co-planar level over the substrate;
- a patterned terminal metal passivation layer covering the option selection device with a via which accesses the terminal metal layer, the patterned terminal metal passivation layer having within its thickness an etch stop layer;
- a barrier layer interposed between the option selection device and the patterned terminal metal passivation layer;
- a bond pad layer within the via and physically contacting the terminal metal layer;
- and
- a patterned bond pad passivation layer upon the patterned terminal metal passivation layer and edge passivating the bond pad layer, wherein the patterned terminal metal passivation layer comprises a first dielectric layer above the terminal metal layer and the option selection device and underlying the etch stop layer and a second dielectric layer on the etch stop layer and underlying the patterned bond pad passivation layer.
An option selection device structure comprising:
- a substrate;
- a terminal metal layer and an option selection device at a co-planar level over the substrate;
- a patterned terminal metal passivation layer covering the option selection device with a via which accesses the terminal metal layer, the patterned terminal metal passivation layer having within its thickness an etch stop layer sandwiched between a pair of dielectric layers,
- a bond pad layer within the via and physically contacting the terminal metal layer;
- and
- a patterned bond pad passivation layer upon the patterned terminal metal passivation layer and edge passivating the bond pad layer, wherein the patterned bond passivation layer is formed so as to directly contact a top surface of the bond pad layer.
Dependencies are inferred from the claim text.