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US 7,067,895 B1Granted
Color imager cell with transistors formed under the photodiodes
AssigneeEastman Kodak Company
InventorReda Razouk
Life of this patent
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Abstract
An imaging cell and a method of forming the imaging cell are disclosed. The imaging cell includes a first transistor that has source, a drain, and a gate, and a second transistor that has a source, a drain, and a gate connected to the source of the first transistor. In addition, the cell has a photodiode that is partially formed over the source of the second transistor.
Claims5
A device comprising:
- an imaging cell formed on a layer of semiconductor material of a first conductivity type, the imaging cell comprising:
- a first transistor having a first region of a second conductivity type formed in the layer of semiconductor material, and a second region of the second conductivity type formed in the layer of semiconductor material;
- an isolation layer formed on the first transistor;
- and
- a region of crystalline semiconductor material having epitaxial lateral overgrowth formed on the isolation layer over the first transistor, the region of semiconductor material having:
- a first layer of the second conductivity type;
- an overlying second layer of the first conductivity type;
- a third layer of the second conductivity type formed on the second layer;
- a fourth layer of the first conductivity type formed on the third layer;
- and
- a fifth layer of the second conductivity type formed on the fourth layer.
8 more elements
Dependencies are inferred from the claim text.