Semiconductor devices using anti-reflective coatings

A semiconductor device comprising:

• a substrate;
• an oxide layer formed over said substrate;
• a layer that is transparent to light formed over said substrate and having a wavelength of approximately 365 nm, wherein said transparent layer includes a material selected from the group consisting of BPSG, PSG and TEOS;
• and
• a first anti-reflective coating formed beneath the transparent layer and on said oxide layer.

A semiconductor device comprising:

• a substrate;
• an oxide layer formed over said substrate;
• a layer that is transparent to light formed over said substrate and having a wavelength of approximately 193 nm, wherein said transparent layer includes a material selected from the group consisting of BPSG, PSG and TEOS;
• and
• a first anti-reflective coating beneath the transparent layer and on said oxide layer.

A semiconductor device comprising:

• a silicon oxide layer formed over a surface of a substrate;
• an anti-reflective coating layer formed on said silicon oxide layer having a first thickness;
• and
• a layer which is transparent to the wavelength of light formed over the anti-reflective coating layer having a second thickness, wherein said first thickness is greater than said second thickness.