Sensor element having elevated diode with sidewall passivated bottom electrode
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDunn-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Yi-Shing Chang
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Abstract
Each of an elevated diode sensor optoelectronic product and a method for fabricating the elevated diode sensor optoelectronic product employs a sidewall passivation dielectric layer passivating a sidewall of a patterned conductor layer which serves as a bottom electrode for an elevated diode within the elevated diode sensor optoelectronic product. The sidewall passivation dielectric layer eliminates contact between the patterned conductor layer and an intrinsic diode material layer within the elevated diode, thus providing enhanced performance of the elevated diode sensor optoelectronic product.
Claims7
A sensor element, comprising:
- a substrate;
- a patterned conductor layer having formed aligned thereupon a patterned first doped diode material layer of a first polarity, both formed over the substrate;
- a sidewall passivation dielectric layer formed passivating a sidewall of the patterned conductor layer and covering edge portions of a top surface of the patterned first doped diode material layer while leaving exposed a central top surface portion thereof;
- an intrinsic diode material layer formed upon the sidewall passivation dielectric layer and the exposed central surface portion of the patterned first doped diode material layer.
Dependencies are inferred from the claim text.