US 7,067,874 B2 · Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round

Abstract

A semiconductor device that includes an insulating substrate, a plurality of semiconductor layers arranged to be isolated from one another on the insulating substrate, and a semiconductor element independently provided on the semiconductor layers. Further, a trench may extend from the main surface to the substrate and have an inner wall covered with an insulating film. At least one of an edge on the side of the substrate and an edge on the side opposite thereof of the semiconductor layer has a rounded surface. Further, an angle between a line tangent to a surface having a smallest radius of curvature of the rounded surface of the edge and the main surface ranges from 30° to 60° at a section of the edge.

Claims5

Dependent claims

A semiconductor device, comprising:

an insulating substrate;
a semiconductor layer provided on said substrate and having a main surface on a side opposite to said substrate;
a trench extending from said main surface to said substrate and having an inner wall covered with an insulating film;
and
a semiconductor element formed in said semiconductor layer,
wherein an edge of an opening of said trench and a bottom surface of said trench have rounded surfaces,
wherein said rounded surface of said bottom surface is a widened portion of said trench wider than said inner wall of said trench, such that said bottom surface of said trench is concave to an outside of said trench.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/436,084Filed 13 May 2003 · continuation

Priority

JP 6-0125594 Feb 1994

Published

US 2003/0203573 A130 Oct 2003

Granted

27 Jun 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification29 codes

H10D 30/657
Lateral dmos [ldmos] fets: having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
H10D 12/01
Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]: manufacture or treatment
H10D 12/021
Manufacture or treatment: of gated diodes, e.g. field-controlled diodes [FCD]
H10D 12/038
Of vertical IGBTs: having a recessed gate, e.g. trench-gate IGBTs

Family

Application08/382,581Parent of this continuation · filed 2 Feb 1995

Application08/996,041Parent of this continuation · filed 22 Dec 1997

Application09/569,031Parent of this continuation · filed 11 May 2000

US 2003/0203573 A1Pre-grant publication · published 30 Oct 2003

US 6,710,401 B2Parent of this continuation

US 6,117,734 AParent of this continuation

US 5,783,491 AParent of this continuation

US 2001/0006836 A1Published application

US 7,067,874 B2This patent

From the US filing history. Foreign family members aren’t listed.

Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round

Life of this patent

Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round

Life of this patent

Abstract

Claims5