Large-area nonenabled macroelectronic substrates and uses therefor

A method of making an electronic substrate having a plurality of semiconductor devices, comprising:

• (a) depositing on a substrate a thin film consisting essentially of semiconducting nanowires or semiconducting nanowires in solution with a sufficient density of nanowires to achieve an operational current level;
• (b) defining a plurality of semiconductor device regions in or on the thin film of nanowires;
• and
• (c) forming one or more pairs of source and drain contacts at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices, wherein at least two or more nanowires within said thin film of nanowires form a channel between each of said respective pairs of source and drain contacts.

A semiconductor device comprising:

• a substrate;
• a plurality of nanowires deposited on the substrate, wherein each of said plurality of nanowires comprises a core made of a first material and a first shell layer made of a second material disposed about said core, wherein said first material is compositionally different from said second material;
• and
• at least a first source contact and a first drain contact formed in or on the substrate providing electrical connectivity to the plurality of nanowires, wherein the plurality of nanowires form a channel between said at least first source and drain contacts.