Stacked switchable element and diode combination
AssigneeMidwest Research Institute
InventorsHoward M. Branz, Qi Wang
Life of this patent
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Abstract
A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).
Claims19
A device comprising a semiconductor diode and a switchable element positioned in stacked adjacent relationship with a stop layer that allows flow of electric current positioned between said semiconductor diode and said switchable element so that said semiconductor diode, said stop layer, and said switchable element are in stacked adjacent contact with one another, and so that said semiconductor diode and said switchable element are electrically connected in series with one another, said switchable element being switchable from a low-conductance state to a high-conductance state in response to the application of a forming current.
A device comprising:
- a semiconductor diode device;
- a switchable element in electrical series connection with the semiconductor diode;
- and
- a stop layer positioned between said semiconductor diode device and said switchable element, the arrangement being such that said semiconductor diode device, said stop layer, and said switchable element are positioned in stacked adjacent relationship, said switchable element being switchable from a low-conductance state to a high-conductance state in response to the application of a forming current that flows through the semiconductor diode device, stop layer, and switchable element.
A method of forming a device, comprising
- forming a diode device from semiconducting material;
- forming an intermediate layer in stacked adjacent relationship with said diode device;
- and
- depositing a metallic layer on said intermediate layer, said intermediate layer and said metallic layer forming a switchable element, said switchable element being switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to said switchable element, said switchable element being in electrical series with said diode device.
Dependencies are inferred from the claim text.