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US 7,067,849 B2Granted
Diode having high brightness and method thereof
AssigneeLG Electronics Inc.
InventorMyung Cheol Yoo
Life of this patent
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Abstract
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
Claims36
A light emitting diode comprising:
- a transparent substrate;
- a buffer layer on a first surface of the transparent substrate;
- an n-GaN layer on the buffer layer;
- an active layer on the n-GaN layer;
- a p-GaN layer on the active layer;
- a p-electrode on the p-GaN layer;
- a p-transparent contact between the p-electrode and the p-GaN layer, wherein the p-transparent contact includes indium-tin-oxide;
- an n-electrode on the n-GaN layer;
- and
- a reflective layer on a second side of the transparent substrate.
7 more elements
The light emitting diode according to claim 22, wherein the metal pad is about 5000 Å or higher.
Dependencies are inferred from the claim text.