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US 7,067,847 B2Granted
Semiconductor element
AssigneeNGK Isulators, Ltd.
InventorsTomohiko Shibata, Keiichiro Asai, Yukinori Nakamura, Mitsuhiro Tanaka
Life of this patent
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Abstract
On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1−p−qN (0≦p≦1, 0≦y≦q). A GaN-based semiconductor layer group is formed on the buffer layer.
Claims13
A semiconductor element, comprising:
- a substrate;
- an underlayer on the substrate comprising a first semiconductor nitride including at least Al, the crystallinity of the underlayer being set to have a full width at half maximum X-ray rocking curve value of 90 seconds or below;
- a buffer layer on the underlayer comprising a second semiconductor nitride;
- and
- a semiconductor layer group on the buffer layer comprising a third semiconductor nitride including at least Ga, and being independent from the buffer layer and the underlayer, wherein
- an Al content of the third semiconductor nitride is set smaller than that of the first semiconductor nitride, the thickness of the underlayer is set within 0.5–1000 μm and the thickness of the buffer layer is set within 0.002–0.1 μm.
3 more elements
Dependencies are inferred from the claim text.