Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
AssigneeRicoh Company, Ltd.
InventorsTakashi Takahashi, Morimasa Kaminishi, Shunichi Sato, Akihiro Itoh, Naoto Jikutani
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Abstract
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
Claims12
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- and
- a semiconductor layer containing Al interposed between said substrate and said active layer,
- wherein an impurity element that forms a non-optical recombination level in said active layer is included in the active layer in a concentration at which said semiconductor light-emitting device can achieve continuous laser oscillation at room temperature.
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- and
- a semiconductor layer containing Al provided between said substrate and said active layer,
- wherein a concentration of oxygen in said active layer is such that said semiconductor light-emitting device can achieve continuous laser oscillation at room temperature.
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing therein nitrogen;
- and
- a semiconductor layer containing therein Al provided between said substrate and said active layer,
- wherein an oxygen concentration of said active layer is less than 1.5×1018 cm−3.
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- and
- a semiconductor layer containing Al provided between said substrate and said active layer,
- wherein an Al concentration of said active layer is such that said semiconductor light-emitting device can achieve continuous laser oscillation at room temperature.
A semiconductor light-emitting device, comprising:
- a substrate;
- an active layer containing nitrogen;
- a semiconductor layer containing Al provided between said substrate and said active layer,
- wherein said active layer contains Al with a concentration of less than 2×1019 cm−3.
A semiconductor light-emitting device having a substrate, an active layer containing nitrogen and a semiconductor layer containing Al provided between said substrate and said active layer,
- wherein there is provided a semiconductor layer containing nitrogen between said semiconductor layer containing Al and said active layer containing nitrogen,
- said semiconductor layer containing Al constituting a distributed Bragg reflector, said semiconductor light-emitting device being a surface-emission type laser diode device emitting an optical beam perpendicularly to a substrate surface.
A semiconductor light-emitting device comprising a substrate, an active layer containing nitrogen and a semiconductor layer containing Al between said substrate and said active layer containing nitrogen,
- wherein there is formed a semiconductor layer containing nitrogen between said semiconductor layer containing Al and said active layer containing nitrogen;
- said semiconductor layer containing Al constituting a distributed Bragg reflector, said semiconductor light-emitting device being a surface-emission type laser diode device emitting an optical beam perpendicularly to a substrate surface.
Dependencies are inferred from the claim text.