Method and device for reducing the contact resistance in organic field-effect transistors by embedding nanoparticles to produce field boosting
AssigneeInfineon Technologies AG
InventorsHagen Klauk, Günter Schmid
Life of this patent
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Abstract
A method for selectively doping an organic semiconductor 1material in the region of a contact area .1formed between a contact and the organic semiconductor material disposed thereon includes introducing the dopant with the aid of nanoparticles, the nanoparticles being disposed in a manner adjoining the contact area and, as a result, only a very narrow region of the organic semiconductor material being doped. The field increase effected by the nanoparticles results in a further reduction of the contact resistance.
Claims8
A semiconductor device configuration, comprising:
- at least one contact of a contact material;
- a layer of an organic semiconductor material, said layer disposed at said at least one contact to form a contact area therebetween;
- nanoparticles disposed at said contact area;
- and
- said organic semiconductor material having a doping in a vicinity of said nanoparticles, said doping being introduced by said nanoparticles, and said doping being selected from the group consisting of a protonated form of said organic semiconductor material, a deprotonated form of said organic semiconductor material, an oxidized form of said organic semiconductor material, a reduced form of said organic semiconductor material, and a charge transfer complex constructed from said organic semiconductor material and said contact material.
In a semicondudtor device, a configuration comprising:
- at least one contact of a contact material;
- a layer of an organic semiconductor material, said layer disposed at said at least one contact to form a contact area therebetween;
- nanoparticles disposed at the contact area;
- and
- said organic semiconductor material having a doping in a vicinity of said nanoparticles, said doping being introduced by said nanoparticles, and said doping being selected from the group consisting of a protonated form of said organic semiconductor material, a deprotonated form of said organic semiconductor material, an oxidized form of said organic semiconductor material, a reduced form of said organic semiconductor material, and a charge transfer complex constructed from said organic semiconductor material and said contact material.
Dependencies are inferred from the claim text.