US 7,067,838 B1Granted

Gallium-nitride-based light-emitting apparatus

AssigneeNitride Semiconductors Co., Ltd.

InventorsHisao Sato, Naoki Wada, Shiro Sakai, Masahiro Kimura

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Abstract

A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer (124); an active layer (129) including an n-type first barrier layer (126), well layers (128), and second barrier layers (130); a p-type block layer (132); and a p-type clad layer (134). By setting the band gap energy Egb of the p-type block layer (132), the band gap energy Eg2 of the second barrier layers (130), the band gap energy Eg1 of the first barrier layer (126), and the band gap energy Egc of the n-type and the p-type clad layers such that the relationship Egb>Eg2>Eg1≧Egc is satisfied; the carriers can be efficiently confined; and the intensity of the light emission can be increased.

Claims20

Dependent claims

A gallium-nitride-based light-emitting apparatus comprising:

a substrate;
a first-conducting-type clad layer formed on the substrate;
an active layer formed on the first-conducting-type clad layer;
and
a second-conducting-type clad layer formed on the active layer,
the active layer including barrier layers and well layers made of a gallium-nitride-based compound semiconductor, wherein
the barrier layers of the active layer include a first barrier layer formed toward the first-conducting-type clad layer and second barrier layers sandwiched by the well layers,
the light-emitting apparatus comprises a second-conducting-type carrier block layer between the active layer and the second-conducting-type clad layer, and
the band gap Egb of the second-conducting-type carrier block layer, the band gap Eg2 of the second barrier layers, the band gap Eg1 of the first barrier layer, and the band gap Egc of the clad layers satisfy the relationship Egb>Eg2>Eg1>Egc.

6 more elements

Dependencies are inferred from the claim text.