Solid-state image pickup device used as a photoelectric conversion device with improved dynamic range

A solid-state image pickup device, comprising:

• a first P-type MOS transistor serving as a reset switch transistor, said first P-type MOS transistor being connected to a voltage source;
• a second P-type MOS transistor serving as a select switch transistor, said second P-type MOS transistor being connected in series with said first P-type MOS transistor, a drain of said second P-type MOS transistor providing an output of the device;
• a third N-type MOS transistor serving as a resetting and bias-setting transistor, said third N-type MOS transistor having a drain connected to a voltage source;
• a photodiode connected in series to the source of said third N-type MOS transistor, said photodiode having an anode connected to ground;
• wherein a voltage signal related to an incident light is present at a gate of said third N-type MOS transistor when said first P-type MOS transistor is OFF, the voltage signal including a voltage across said photodiode and a voltage between the gate and the source of said third N-type MOS transistor;
• and
• wherein said gate is coupled to a connection point between said first and second P-type MOS transistors.

A solid-state image pickup devices, comprising:

• a first P-type MOS transistor serving as a reset switch transistor, said first P-type MOS transistor being connected to a reference voltage source;
• a second P-type MOS transistor serving as a select switch transistor, said second P-type MOS transistor being connected in series with said first P-type MOS transistor, a drain of said second P-type MOS transistor providing an output of the device;
• a photodiode having a cathode connected to a voltage source;
• and
• a third P-type MOS transistor serving as a resetting and bias-setting transistor, said third P-type MOS transistor being connected to an anode of said photodiode, said third P-type MOS transistor having a drain connected to ground;
• wherein a voltage signal related to an incident light is present at a gate of said third P-type MOS transistor when said first P-type MOS transistor is OFF, the voltage signal including a voltage across said photodiode and a voltage between the gate and a source of said third P-type MOS transistor;
• and
• wherein said gate is coupled to a connection point between said first and second P-type MOS transistors.