Material demonstrating negative or low thermal expansion coefficient and method for manufacture thereof
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTomoko Suzuki, Atsushi Omote, Masa-aki Suzuki
Life of this patent
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Abstract
A material having a negative or low thermal expansion coefficient and composed substantially of a single crystal system is provided. The material is an oxide represented by the chemical formula ((R4+M2+)1-xA3+2x)(QO4)3 (where R stands for at least one tetravalent metal element selected from Zr and Hf; M stands for at least one divalent metal element selected from Mg, Ca, Sr, Ba, and Ra; Q stands for at least one hexavalent metal element selected from W and Mo; and A stands for at least one trivalent metal element selected from Al, Sc, Y, Lu, Ga, and In; 0<x<1) and composed substantially of a single crystal system.
Claims26
A material having a negative or low thermal expansion coefficient, which is an oxide represented by the chemical formula ((R4+M2+)1-xA3+2x)(QO4)3 wherein R stands for at least one tetravalent metal element selected from Zr and Hf M stands for at least one divalent metal element selected from Mg, Ca, Sr, Ba, and Ra;
- Q stands for at least one hexavalent metal element selected from W and Mo;
- and A stands for at least one trivalent metal element selected from Al, Sc, Y, Lu, Ga, and In;
- 0<x<1 and wherein the oxide is composed substantially of one crystal system.
A method for the manufacture of a material having a negative or low thermal expansion coefficient, wherein the material is an oxide represented by the chemical formula ((R4+M2+)1-xA3+2x) (QO4)3 wherein R stands for at least one tetravalent metal element selected from Zr and Hf;
- M stands for at least one divalent metal element selected from Mg, Ca, Sr, Ba, and Ba;
- Q stands for at least one hexavalent metal element selected from W and Mo;
- and A stands for at least one trivalent metal element selected from Al, Sc, Y, Lu, Ga, and In;
- 0<x<1 and wherein the oxide is composed substantially of one crystal system,
- the method comprising the steps of
- mixing (R4+M2+)(Q6+O4)3 wherein R stands for at least one tetravalent metal element selected from Zr and Hf M stands for at least one divalent metal element selected from Mg, Ca, Sr, Ba, and Ra;
- Q stands for at least one hexavalent metal element selected from W and Mo with A3+2(Q6+O4)3 wherein A stands for at least one trivalent metal element selected from Al, Sc, Y, Lu, Ga, and In;
- Q stands for at least one hexavalent metal element selected from W and Mo, and
- firing the obtained mixture.
Dependencies are inferred from the claim text.