Method to avoid threshold voltage shift in thicker dielectric films
AssigneeMicron Technology, Inc.
InventorsRandhir P. S. Thakur, Ravi Iyer, Howard Rhodes
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Abstract
A method of fabricating an integrated circuit having reduced threshold voltage shift is provided. A nonconducting region is formed on the semiconductor substrate and active regions are formed on the semiconductor substrate. The active regions are separated by the nonconducting region. A barrier layer and a dielectric layer are deposited over the nonconducting region and over the active regions. Heat is applied to the integrated circuit causing the barrier layer to anneal.
Claims5
A method of processing a substrate comprising two active areas and an intervening insulating region, said method comprising:
- depositing an oxide charge barrier over said substrate;
- depositing an insulative material over said oxide charge barrier, wherein said insulative material is less insulative than said barrier;
- and
- providing a conductive element over said insulative material, wherein said element is generally laterally coextensive with said intervening insulating region.
Dependencies are inferred from the claim text.