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US 7,067,441 B2Granted
Damage-free resist removal process for ultra-low-k processing
AssigneeTexas Instruments Incorporated
InventorsPatricia B. Smith, Phillip D. Matz
Life of this patent
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Abstract
A process for removing resist (114) from a CDO dielectric material (110) that uses a non-damaging plasma in a reducing atmosphere under high power and using a structure (150) or other means to limit ions from the plasma from reaching the surface of the CDO material (110).
Claims20
A method for fabricating an integrated circuit, comprising the steps of:
- depositing an organic containing material comprising greater than 5% Si—R bonding at a surface, where R is H, CH3, C2H5, C6H6 or other organic group;
- subjecting said organic containing material to a hydrogen plasma with a power of at least 500 W and uses a structure to limit ions from the hydrogen plasma from reaching the organic containing material.
A method for fabricating an integrated circuit, comprising the steps of:
- depositing a carbon-doped oxide (CDO) material over a semiconductor body;
- forming a resist pattern over said CDO material;
- etching said CDO material using said resist pattern;
- removing said resist pattern using a hydrogen plasma with a power in the range of at least 500 W and uses a structure to limit ions from the hydrogen plasma from reaching the CDO material.
1 more element
A method for fabricating an integrated circuit, comprising the steps of:
- depositing a CDO material over a semiconductor body;
- forming a resist pattern over said CDO material;
- etching said CDO material using said resist pattern;
- removing said resist pattern using a plasma of H2 with or without an inert diluent gas, wherein said plasma creates a high plasma density at said CDO material and uses a structure to limit ions from the plasma from reaching the CDO-based material;
- and
- cleaning said CDO material using a wet clean.
3 more elements
Dependencies are inferred from the claim text.