ALD metal oxide deposition process using direct oxidation
AssigneeApplied Materials, Inc.
InventorsCraig R. Metzner, Shreyas S. Kher, Vidyut Gopal, Shixue Han, Shankarram A. Athreya
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Abstract
Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.
Claims25
A method for forming a hafnium-containing film on a substrate, comprising:
- providing a substrate within a process chamber;
- exposing the substrate to TDEAH and an oxygen-source compound during an ALD process to form a hafnium oxide layer thereon;
- and
- exposing the substrate to active nitrogen species generated by a remote plasma generator to form a nitride layer on the substrate.
A method for forming a hafnium-containing film on a substrate, comprising:
- exposing a substrate to a hafnium-containing compound within a process chamber;
- purging the process chamber with a purge gas;
- introducing an oxygen-source compound into the process chamber;
- purging the process chamber with the purge gas;
- introducing the hafnium-containing compound into the process chamber;
- purging the process chamber with the purge gas;
- introducing an active nitrogen species into the process chamber;
- and
- purging the process chamber with the purge gas.
A method for forming a hafnium-containing film on a substrate, comprising:
- exposing a substrate to a hafnium-containing compound within a process chamber;
- purging the process chamber with a purge gas;
- exposing the substrate to an oxygen-source gas containing an active oxygen species and argon;
- purging the process chamber with the purge gas;
- exposing the substrate to active nitrogen species;
- and
- purging the process chamber with the purge gas.
A method for forming a hafnium-containing film on a substrate, comprising:
- exposing a substrate to TDEAH within a process chamber;
- purging the process chamber with a purge gas;
- exposing the substrate to an oxygen-source compound;
- purging the process chamber with the purge gas;
- exposing the substrate to active nitrogen species;
- and purging the process chamber with the purge gas.
Dependencies are inferred from the claim text.