Method of forming silicon oxide film and forming apparatus thereof
AssigneesNEC Corporation, Anelva Corporation
InventorsKatsuhisa Yuda, Ge Xu
Life of this patent
Estimating the term…
Abstract
In a method of forming a silicon oxide film, the silicon oxide film is formed on a substrate by the use of a plasma CVD method. A plasma-generating region is separated from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms. Plasma of first gas containing oxygen atoms is formed in the plasma-generating region while second gas containing silicon atoms is supplied into the deposition region. First quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms are controlled intentionally.
Claims5
A method of forming a silicon oxide film on a substrate by the use of vapor phase chemical reaction using a plasma CVD method, comprising the steps of:
- separating a plasma generating region from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms, plasma of a first gas containing oxygen atoms being formed in the plasma generating region while a second gas containing silicon atoms being supplied into the deposition region;
- and
- intentionally controlling a first quantity of the excitation oxygen molecules and a second quantity of the excitation oxygen atoms by controlling at least a deposition pressure of the silicon oxide film, wherein said deposition pressure is controlled such that said second quantity is relatively less than said first quantity.
A method of forming a silicon oxide film on a substrate by the use of vapor phase chemical reaction using a plasma CVD method, comprising the steps of:
- separating a plasma generating region from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms, plasma of a first gas containing oxygen atoms being formed in the plasma generating region while a second gas containing silicon atoms being supplied into the deposition region;
- and
- intentionally controlling a first emission intensity of the excitation oxygen molecules and a second emission intensity of the excitation oxygen atoms, wherein said second emission intensity is controlled to be relatively less than said first emission intensity.
Dependencies are inferred from the claim text.