Back to results
US 7,067,426 B2Granted
Semiconductor processing methods
AssigneeMicron Technology, Inc.
InventorJames J. Hofmann
Life of this patent
Estimating the term…
Abstract
The invention includes methods of forming patterns in low-k dielectric materials by contact lithography. In a particular application, a mold having a first pattern is pressed into a low-k dielectric material to form a second pattern within the material. The second pattern is substantially complementary to the first pattern. The mold is then removed from the low-k dielectric material. The invention also includes a method of forming a mold; and includes a mold configured to pattern a mass over a semiconductor substrate during contact lithography of the mass.
Claims7
A semiconductor processing method comprising:
- providing a semiconductor substrate having a non-photoresist material thereover;
- providing a mold comprising a first pattern comprising projections and valleys between the projections;
- aligning the mold and the semiconductor substrate relative to one another;
- after aligning, pressing the non-photoresist material between the mold and the semiconductor substrate to form a second pattern, the second pattern being substantially complementary to the first pattern and comprising openings extending through the non-photoresist material;
- removing the mold from over the non-photoresist material;
- and
- forming a conductive material within the openings extending through the non-photoresist material.
4 more elements
Dependencies are inferred from the claim text.