Multilevel copper interconnect with double passivation

A method for forming multilevel wiring interconnects in an integrated circuit assembly, comprising:

• forming a number of multilayer metal lines separated by a number of air gaps above a substrate;
• forming a silicide layer on the number of multilayer metal lines;
• nitriding the silicide layer;
• and
• depositing a low dielectric constant insulator to fill a number of interstices between the number of multilayer metal lines.

A method for forming multilayer wiring interconnects in an integrated circuit assembly, comprising:

• forming a number of multilayer Copper metal lines separated by a number of air gaps above a substrate;
• forming a silicide layer on the number of multilayer Copper metal lines;
• oxidizing the silicide layer;
• and
• depositing a low dielectric constant insulator to fill a number of interstices between the number of multilayer Copper metal lines.

A method for forming multilayer wiring interconnects in an integrated circuit assembly, comprising:

• forming a number of multilayer Copper metal lines separated by a number of air gaps above a substrate;
• forming a silicide layer on the number of multilayer Copper metal lines;
• oxidizing the silicide layer;
• depositing a layer of Aluminum on the oxidized silicide layer;
• and
• depositing a low dielectric constant insulator to fill a number of interstices between the number of multilayer Copper metal lines.

A method for forming multilayer wiring interconnects in an integrated circuit assembly, comprising:

• forming a number of multilayer Copper metal lines separated by a number of air gaps above a substrate;
• forming a silicide layer on the number of multilayer Copper metal lines;
• nitriding the silicide layer;
• depositing a layer of Aluminum on the oxidized silicide layer;
• and
• depositing a low dielectric constant insulator to fill a number of interstices between the number of multilayer Copper metal lines.

A method, comprising:

• forming a metal line air-bridge structure from a number of multilayer metal lines that connect to a number of silicon devices in a substrate;
• covering exposed surfaces of the air-bridge structure with a silicide layer;
• hermetically sealing the underlying metal lines with an oxide layer on the silicide layer and the silicide layer;
• and
• forming a low dielectric constant insulator in the number of interstices.

A method, comprising:

• connecting a number of multilayer metal lines to a number of silicon devices in a substrate;
• forming a lightly doped silicide layer on the number of multilayer metal lines;
• hermetically sealing underlying metal lines with the silicide layer and an oxide layer on the silicide layer;
• forming a low dielectric constant insulator in a number of interstices between the number of multilayer metal lines and the substrate;
• and
• wherein the silicide layer on the number of multilayer metal lines.

A method, comprising:

• forming a metal line air-bridge structure, which has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure and connects to a number of silicon devices in a substrate;
• covering the exposed surfaces of the air-bridge structure with a silicide layer;
• hermetically sealing metal lines of the air-bridge structure underlying a nitride layer on the silicide layer;
• and
• providing a low dielectric constant insulator in the number of interstices.

A method, comprising:

• connecting a number of multilayer metal lines to a number of silicon devices in a substrate;
• forming a heavily doped silicide layer on the number of multilayer metal lines;
• hermetically sealing metal lines using a nitride layer, which underlie the silicide layer, with nitride and silicide layers;
• forming a low dielectric constant insulator in a number of interstices between the number of multilayer metal lines and the substrate.

A method, comprising:

• forming a metal line air-bridge structure, which connects to a number of silicon devices in a substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure, with a number of multilayer Copper lines;
• a silicide layer covering the exposed surfaces of the air-bridge structure with a silicide layer;
• forming an oxide layer on the silicide layer overlying the metal lines so as to hermetically seal the underlying metal lines;
• forming a metal layer on the oxide layer;
• and
• forming a low dielectric constant insulator in the number of interstices.

A method, comprising:

• forming one or more transistors in a substrate;
• forming a metal line air-bridge structure, which connects to one or more of the transistors in the substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure, from a number of multilayer Copper lines;
• covering the exposed surfaces of the air-bridge structure with a suicide layer;
• hermetically sealing underlying metal lines with the silicide layer and an oxide layer on the silicide layer;
• forming a layer of partially oxidized Aluminum on the oxide layer;
• and
• forming a low dielectric constant insulator in the number of interstices.

A method, comprising:

• a substrate including one or more transistors;
• forming a metal line air-bridge structure that connects to one or more of the transistors in the substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure from a number of multilayer Copper lines;
• covering the exposed surfaces of the air-bridge structure with a silicide layer;
• forming a nitride layer on the silicide layer so as to provide a hermetic seal of the underlying metal lines;
• forming a layer of partially oxidized Aluminum on the nitride layer;
• and
• forming a low dielectric constant, first insulator in the number of interstices.

A method, comprising:

• providing one or more transistors in a substrate;
• forming, from a number of multilayer Copper lines, a metal line air-bridge structure that connects to one or more of the transistors in the substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure;
• covering the exposed surfaces of the air-bridge structure with a silicide layer;
• hermetically sealing, with an oxide layer and the silicide layer, the underlying metal lines;
• forming a metal layer on the oxide layer;
• forming a low dielectric constant insulator in the number of interstices;
• and
• coupling an integrated memory circuit including the metal line air-bridge structure to a processor.

A method, comprising:

• forming one or more transistors on a substrate;
• forming, with a number of multilayer metal lines, a metal line air-bridge structure that connects to one or more of the transistors in the substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure;
• covering the exposed surfaces of the air-bridge structure with a silicide layer;
• providing an oxide layer on the silicide layer so as to provide a hermetic seal of the underlying metal lines with the oxide and suicide layers;
• forming a layer of Al2O3 having a thickness of approximately 20 Angstroms (Å) on the oxide layer;
• forming a low dielectric constant insulator in the number of interstices;
• and
• coupling an integrated memory circuit including the metal line air-bridge structure to a processor.

A method, comprising:

• forming one or more transistors on a substrate;
• connecting a number of multilayer metal lines to one or more of the transistors in the substrate;
• forming a lightly doped silicide layer on the number of multilayer metal lines;
• forming an oxide layer on the silicide layer so as to hermetically seal the underlying metal lines;
• forming a layer of Al2O3 having a thickness of approximately 20 Angstroms (Å) on the oxide layer;
• forming a low dielectric constant insulator in a number of interstices between the number of multilayer metal lines and the substrate;
• and
• coupling an integrated memory circuit including the metal line air-bridge structure to a processor.

A method, comprising:

• forming, from a number of multilayer metal lines, a metal line air-bridge structure that connects to a number of silicon devices in a substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure;
• covering the exposed surfaces of the air-bridge structure with a silicide layer;
• hermetically sealing the underlying metal lines with the silicide layer and an oxide layer on the silicide layer;
• and
• substantially filling the number of interstices with a low dielectric constant insulator.

A method, comprising:

• forming, from a number of multilayer metal lines, a metal line air-bridge structure that connects to a number of silicon devices in a substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure;
• covering the exposed surfaces of the air-bridge structure with a silicide layer;
• forming an oxide layer converted from and located on the silicide layer so as to provide a hermetic seal of the underlying metal lines;
• and
• forming a low dielectric constant insulator in the number of interstices.

A method, comprising:

• forming, from a number of multilayer metal lines, a metal line air-bridge structure that connects to a number of silicon devices in a substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure;
• providing a silicide layer covering the exposed surfaces of the air-bridge structure;
• forming a nitride layer on the silicide layer wherein the nitride and silicide layers provide a hermetic seal of the underlying metal lines;
• and
• substantially filling the number of interstices with a low dielectric constant insulator.

A method, comprising:

• forming, from a number of multilayer metal lines, a metal line air-bridge structure that connects to a number of silicon devices in a substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure;
• providing a silicide layer covering the exposed surfaces of the air-bridge structure;
• forming a nitride layer converted from and located on the silicide layer wherein the nitride and silicide layers provide a hermetic seal of the underlying metal lines;
• and
• forming a low dielectric constant insulator in the number of interstices.

A method, comprising:

• forming, with a number of multilayer Copper lines, a metal line air-bridge structure that connects to a number of silicon devices in a substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure;
• forming a silicide layer covering the exposed surfaces of the air-bridge structure;
• forming an oxide layer on the silicide layer wherein the oxide and silicide layers provide a hermetic seal of the underlying metal lines;
• forming a metal layer on the oxide layer;
• and
• substantially filling the number of interstices with a low dielectric constant insulator.

A method, comprising:

• forming, with a number of multilayer Copper lines, a metal line air-bridge structure that connects to a number of silicon devices in a substrate and has a number of top, bottom, and side exposed surfaces adjacent to a number of interstices in the air-bridge structure;
• forming a silicide layer covering the exposed surfaces of the air-bridge structure;
• forming an oxide layer converted from and located on the silicide layer wherein the oxide and silicide layers provide a hermetic seal of the underlying metal lines;
• forming a metal layer on the oxide layer;
• and
• forming a low dielectric constant insulator in the number of interstices.