Methods for forming a metal layer on a semiconductor

A method of forming a metal layer on an integrated circuit device, comprising the steps of:

• forming an insulating layer on an integrated circuit substrate;
• forming a contact hole by selectively etching the insulating layer to thereby partially expose the substrate;
• and
• forming a metal layer including tantalum nitride on the insulating layer and filling the contact hole using a tantalum precursor including a tantalum element and at least one bonding element that is chemically bonded to the tantalum element, wherein a part of the at least one bonding element includes at least one ligand bonding element which is ligand-bonded to the tantalum element, wherein forming the metal layer comprises a chemical vapor deposition (CVD) process including:
• a) introducing a tantalum amine derivative as the tantalum precursor;
• b) introducing at least one of a H2 gas, a N2 gas, a compound gas including a nitrogen (N) atom, or a combination thereof,
• c) generating plasma ions of the H2 gas, the N2 gas, or the combination thereof;
• and
• d) forming a thin film including tantalum nitride on the insulating layer including the contact hole by reacting the plasma ions with the insulating layer.