US 7,067,418 B2 · Interconnect structure and method for fabricating the same

Abstract

A method for fabricating interconnects is provided. The method comprises forming a conducting line on a first dielectric layer; forming a first liner layer on the surfaces of the first dielectric layer and the conducting line; forming a second liner layer on the first liner layer; forming a second dielectric layer on the second liner layer, wherein the etching selectivity rate of the second dielectric layer is higher than the etching selectivity rate of the second liner; and patterning the second dielectric layer to form a contact window opening through the second liner layer and the first liner layer to expose the surface of the conducting line. Because the second dielectric layer having an etching rate higher than the etching rate of the second liner layer, the second liner layer can be used as an etch stop layer while patterning the second dielectric layer.

Claims10

Dependent claims

A method for fabricating interconnects, comprising:

forming a conducting line on a first dielectric layer;
forming a first liner layer on the surfaces of said first dielectric layer and said conducting line;
forming a second liner layer on said first liner, said dielectric layer having an etching rate;
forming a second dielectric layer on said second liner, said second dielectric layer having an etching rate higher than said etching rate of said second liner;
and
patterning said second dielectric layer to form a contact window opening through said second liner layer and said first liner layer to expose the surface of said conducting line.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/908,824Filed 27 May 2005 · division

Priority

TW 92123869 A29 Aug 2003

Published

US 2005/0048749 A115 Sep 2005

Granted

27 Jun 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10W 20/038
Of conductive barrier, adhesion or liner layers: covering conductive structures
H10W 20/075
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: of multilayered…
H10W 20/081
Of dielectric parts thereof: by forming openings in the dielectric parts
H10W 20/098
Of dielectric parts thereof: by filling between adjacent conductive parts

Interconnect structure and method for fabricating the same

Life of this patent

Interconnect structure and method for fabricating the same

Life of this patent

Abstract

Claims10