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US 7,067,417 B2Granted
Methods of removing resistive remnants from contact holes using silicidation
AssigneeSamsung Electronics Co., Ltd.
InventorsHee-sook Park, Gil-heyun Choi, Jong-myeong Lee
Life of this patent
Estimating the term…
Abstract
A contact hole can be formed in an insulating layer to expose a surface of an underlying silicon layer at a bottom of the contact hole having a first size. A metal silicide layer can be formed beneath the bottom of the contact hole and removed to form a void beneath the contact hole having a second size that is greater than the first size.
Claims23
A method of forming an interconnection contact comprising:
- forming a contact hole in an insulating layer to expose a surface of an underlying silicon layer at a bottom of the contact hole having a first size;
- forming a metal silicide layer beneath the bottom of the contact hole;
- removing the metal silicide layer to form a void beneath the contact hole having a second size that is greater than the first size;
- and
- forming an interconnection contact in the void having the second size.
2 more elements
A method of forming an interconnection contact comprising:
- forming an insulating layer on a silicon layer;
- forming a contact hole in the insulating layer to expose a surface of the silicon layer at a bottom thereof having a first size;
- forming a metal layer silicide layer on the exposed surface of the silicon layer;
- removing the metal silicide layer to form a void beneath the exposed surface of the silicon layer that extends outward beyond sidewalls of the contact hole;
- and
- forming an interconnection contact in the contact hole and in the void.
3 more elements
A method of forming interconnection contacts comprising:
- forming spaced-apart gate lines on a substrate;
- forming an insulating layer in gaps between the gate lines;
- forming contact holes by patterning the insulating layer to expose surfaces of the substrate between the gate lines;
- forming a metal layer on bottoms of the contact holes to form a metal silicide layer between the metal layer and the substrate;
- removing the metal suicide layer and the metal layer;
- and
- forming interconnection contacts that fill the contact holes.
4 more elements
A method of forming interconnection contacts, the method composing:
- forming a first insulating layer on a substrate so that the first insulating layer surrounds first interconnection contacts;
- forming a second insulating layer on the first interconnection contacts;
- forming bit lines on the second insulating layer;
- forming a third insulating layer in gaps between the bit lines;
- forming contact holes in the third insulating layer and in the second insulating layer between the bit lines to expose bottom surfaces of the first interconnection contacts;
- forming a metal layer on bottoms of the contact holes to form a metal silicide layer between the metal layer and the substrate;
- removing the metal silicide layer and the metal layer;
- and
- forming interconnection contacts that fill the contact holes.
6 more elements
Dependencies are inferred from the claim text.