Method to prevent metal oxide formation during polycide reoxidation

A method of fabricating a semiconductor device, having one or more layers of materials deposited on a polysilicon layer, comprising:

• selectively etching the semiconductor device to form one or more features having sidewalls exposing the one or more layers of materials, wherein the polysilicon layer serves as an etch stop;
• selectively depositing a first spacer comprising silicon nitride or an amorphous silicon film only on the sidewalls of each of the one or more features;
• and
• reoxidizing the semiconductor device.

A method of forming a structure for controlling current flow between a source and a drain region in a semiconductor device, comprising:

• forming an insulating layer on a semiconductor wafer;
• forming a conductive layer over the insulating layer;
• forming a gate by etching, using the insulating layer as an etch stop, wherein the gate has sidewalls exposing the conductive layer and some portion of the insulating layer;
• selectively forming a first oxidation barrier comprising silicon nitride or an amorphous silicon film only on the sidewalls of the gate;
• and
• reoxidizing the structure.

A method of forming a structure for controlling current flow between a source and a drain region in a semiconductor device, wherein the semiconductor device is composed of a semiconductor layer, an insulating layer disposed over the semiconductor layer, and a conductive layer disposed over the insulating layer, the method comprising:

• forming a gate having sidewalls exposing the conductive layer and some portion of the insulating layer;
• depositing a thin silicon nitride on the gate;
• avoiding depositing the thin silicon nitride on the insulating layer disposed above the source and the drain region;
• and
• reoxidizing the structure.

A method of forming a semiconductor device comprising:

• forming an oxide layer;
• forming at least one feature over the oxide layer, the feature having a surface and being contiguous with the oxide layer at a boundary;
• and
• forming a spacer comprising silicon nitride or an amorphous silicon film covering the surface of the feature and terminating at a location adjacent to the boundary wherein the spacer is not in contact with the oxide layer.

A method of forming an electronic device comprising:

• forming a first layer of oxide;
• forming a feature over the first layer of oxide, the feature having a surface;
• and
• forming a spacer comprising silicon nitride or an amorphous silicon film only on a substantially vertical portion of the surface of the feature.

A method of forming an electronic device comprising:

• forming a first layer of oxide;
• forming a feature over the first layer of oxide, the feature having a surface;
• forming a spacer comprising silicon nitride or an amorphous silicon film only on the surface of the feature;
• and
• forming a second layer of oxide on the spacer and the first layer of oxide, the second layer of oxide forming a gap at a boundary between the feature and the first layer of oxide.

A method of forming an electronic device comprising:

• forming a first layer of oxide;
• forming an electrode on the first layer of oxide, the electrode having sidewalls;
• and
• depositing a spacer comprising silicon nitride or an amorphous silicon film only on the sidewalls of the electrode, the spacer extending to and terminating adjacent to a boundary between the first layer of oxide and the sidewalls of the electrode.