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US 7,067,410 B2Granted
Method of forming a metal silicide
AssigneeAdvanced Micro Devices, Inc.
InventorsKarsten Wieczorek, Thorsten Kammler, Manfred Horstmann
Life of this patent
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Abstract
The present invention provides a technique for forming a metal silicide, such as a cobalt disilicide, even at extremely scaled device dimensions without unduly degrading the film integrity of the metal silicide. To this end, an ion implantation may be performed, advantageously with silicon, prior to a final anneal cycle, thereby correspondingly modifying the grain structure of the precursor of the metal silicide.
Claims17
A method of forming a metal silicide, the method comprising:
- depositing a layer of refractory metal over a silicon region formed on a substrate;
- annealing said substrate to form a metal monosilicide;
- introducing noble gas ions into said metal monosilicide;
- and
- annealing said substrate to convert said metal monosilicide into a metal disilicide.
2 more elements
A method, comprising:
- forming a transistor element comprised of a gate electrode having a gate length of approximately 60 nm or less;
- forming a metal silicon compound layer over said gate electrode;
- implanting noble gas ions into said metal silicon compound layer;
- and
- annealing said metal silicon compound layer to form a low resistivity metal silicide in said gate electrode.
2 more elements
A method of forming a metal silicide on a gate electrode, comprising:
- forming a transistor element on a substrate, said transistor element including a gate electrode and a drain region and a source region, said gate electrode having a gate length less than approximately 60 nm or less;
- forming a refractory metal layer over said transistor element;
- implanting noble gas ions into said refractory metal layer;
- and
- annealing said substrate to form a metal silicide region in said gate electrode and said drain and source regions.
2 more elements
Dependencies are inferred from the claim text.