Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJian Shin Tsai, Yu Hua Chou, Tzo Hung Luo, Chi Chan Tseng, Wei Zhang, Jong Chen Yang
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Abstract
A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
Claims25
A method of manufacturing a semiconductor device contact, comprising:
- forming an insulating layer over a substrate;
- forming an agglutinating layer over the insulating layer;
- exposing the agglutinating layer to a plasma treatment employing a process chemistry comprising nitrogen and hydrogen;
- forming a barrier layer over the plasma-treated agglutinating layer;
- and
- forming a conductive layer over the barrier layer.
A method of manufacturing a semiconductor device, comprising:
- providing a substrate having logic devices formed therein;
- forming an insulating layer over the substrate and logic devices;
- forming a plurality of recesses in the insulating layer each exposing a portion of one of the logic devices
- forming an agglutinating layer over the insulating layer and at least partially within the plurality of recesses;
- exposing the agglutinating layer to a plasma treatment;
- forming a barrier layer over the plasma-treated agglutinating layer and at least partially within the plurality of recesses;
- and
- forming a bulk conductive layer over the barrier layer to fill the plurality of recesses.
A method of manufacturing a semiconductor device, comprising:
- forming an insulating layer over a substrate;
- forming an agglutinating layer over the insulating layer;
- exposing the agglutinating layer to a plasma treatment immediately after the agglutinating layer is formed;
- forming a barrier layer over the plasma-treated agglutinating layer;
- and
- forming a conductive layer over the barrier layer.
The method recited in claim 22 wherein the agglutinating layer comprises TiN and is formed by IMP deposition.
Dependencies are inferred from the claim text.