Thermal conducting trench in a semiconductor structure and method for forming the same
AssigneeIntel Corporation
InventorsChunlin Liang, Brian S. Doyle
Life of this patent
Estimating the term…
Abstract
The invention relates to a method of forming a trench filled with a thermally conducting material in a semiconductor substrate. In one embodiment, the method includes filling a portion of the trench with a thermally conducting material and patterning a contact to the thermally conducting material. The invention also relates to a semiconductor device. In one embodiment, the semiconductor device has a trench defining a cell region, wherein a portion of the trench includes a thermally conducting material, and a contact to the thermally conducting material. The invention further relates to a semiconductor device and a method of forming a semiconductor device with an interlayer dielectric that is a thermally conducting material.
Claims11
A method comprising:
- in a circuit substrate having a device structure in an active area, filling a portion of a trench with a thermally conducting material having a thermal conductivity greater than a thermal conductivity of silicon dioxide;
- patterning a thermally conducting contact to the thermally conducting material, wherein the patterned thermally conducting contact has a top surface and a plurality of exposed side surfaces;
- after patterning a thermally conducting contact to the thermally conducting material, forming a spacer portion, of dielectric material adjacent to at least one of the exposed side portions.
A method comprising:
- in a circuit substrate having a device structure in an active area, filling a portion of a trench with a first thermally conducting material having a thermal conductivity greater than a thermal conductivity of silicon dioxide;
- patterning a thermally conducting contact to the first thermally conducting material, wherein the patterned thermally conducting contact has a top surface;
- after patterning a thermally conducting contact to the first thermally conducting material, depositing a second thermally conducting material over the structure and to the first thermally conducting material.
Dependencies are inferred from the claim text.