Method for manufacturing a semiconductor device that includes adding noble gas to a semiconductor film and then irradiating the semiconductor film with laser light in the presence of a magnetic field

A method for manufacturing a semiconductor device comprising:

• adding first noble gas to a semiconductor film formed over an insulating surface, and
• irradiating first and second continuous wave laser light to the semiconductor film added with the first noble gas in an atmosphere of second noble gas,
• wherein the first laser light has a wavelength of a harmonic,
• wherein the second laser light has a wavelength of a fundamental wave, and
• wherein a magnetic field is applied to the semiconductor film added with the first noble gas in a direction perpendicular to the semiconductor film when the first and the second laser light are irradiated.

A method for manufacturing a semiconductor device comprising:

• adding first noble gas to a semiconductor film formed over an insulating surface by an ion doping method, and
• irradiating first and second continuous wave laser light to the semiconductor film added with the first noble gas in an atmosphere of second noble gas,
• wherein the first laser light has a wavelength of a harmonic,
• wherein the second laser light has a wavelength of a fundamental wave, and
• wherein a magnetic field is applied to the semiconductor film added with the first noble gas in a direction parallel to a scanning direction of the first laser light when the first and the second laser light are irradiated.

A method for manufacturing a semiconductor device comprising:

• adding first noble gas to a semiconductor film formed over an insulating surface by an ion doping method, and
• irradiating first and second continuous wave laser light to the semiconductor film added with the first noble gas in an atmosphere of second noble gas,
• wherein the first laser light has a wavelength of a harmonic,
• wherein the second laser light has a wavelength of a fundamental wave, and
• wherein a magnetic field is applied to the semiconductor film added with the first noble gas in a direction which is parallel to the semiconductor film and which is perpendicular to a scanning direction of the first laser light when the first and the second laser light are irradiated.

A method for manufacturing a semiconductor device comprising:

• irradiating first and second laser light to a semiconductor film formed over an insulating surface added with first noble gas in an atmosphere of second noble gas,
• wherein the first laser light has a wavelength of a harmonic,
• wherein the second laser light has a wavelength of a fundamental wave, and
• wherein a magnetic field is applied to the semiconductor film added with the first noble gas when the first and the second laser light are irradiated.

A method for manufacturing a semiconductor device comprising:

• irradiating first and second continuous wave laser light to a semiconductor film formed over an insulating surface added with first noble gas in an atmosphere of second noble gas,
• wherein the first laser light has a wavelength of a harmonic,
• wherein the second laser light has a wavelength of a fundamental wave, and
• wherein a magnetic field is applied to the semiconductor film added with the first noble gas in a direction perpendicular to the semiconductor film when the first and the second laser light are irradiated.

A method for manufacturing a semiconductor device comprising:

• irradiating first and second continuous wave laser light to a semiconductor film formed over an insulating surface added with first noble gas in an atmosphere of second noble gas,
• wherein the first laser light has a wavelength of a harmonic,
• wherein the second laser light has a wavelength of a fundamental wave, and
• wherein a magnetic field is applied to the semiconductor film added with the first noble gas in a direction parallel to a scanning direction of the first laser light when the first and the second laser light are irradiated.

A method for manufacturing a semiconductor device comprising:

• irradiating first and second continuous wave laser light to a semiconductor film formed over an insulating surface added with first noble gas in an atmosphere of second noble gas,
• wherein the first laser light has a wavelength of a harmonic,
• wherein the second laser light has a wavelength of a fundamental wave, and
• wherein a magnetic field is applied to the semiconductor film added with the first noble gas in a direction which is parallel to the semiconductor film and which is perpendicular to a scanning direction of the first laser light when the first and the second laser light are irradiated.