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US 7,067,386 B2Granted
Creation of high mobility channels in thin-body SOI devices
AssigneeIntel Corporation
InventorsBrian S. Doyle, Brian E. Roberds
Life of this patent
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Abstract
A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film-and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.
Claims12
A method comprising:
- providing a first wafer having a stack structure of a first base substrate, a layer of relaxed film, and a first layer of strained film,
- depositing a layer of oxide onto the layer of strained film to provide an adhesion surface to the first wafer;
- providing a second wafer, the second wafer being a silicon on insulation (SOI) wafer having a stack structure of a second base substrate and a layer of oxidized film;
- attaching the first and second wafers;
- heating the first and second wafers at a first temperature to cause a silicon dioxide (SiO2) adhesion of the first substrate to the second substrate;
- and
- etching the first base substrate, and the layer of relaxed film to result in the strain of film on the surface of the SOI wafer.
4 more elements
Dependencies are inferred from the claim text.