Support for vertically oriented capacitors during the formation of a semiconductor device
AssigneeMicron Technology, Inc.
InventorHomer M. Manning
Life of this patent
Estimating the term…
Abstract
A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.
Claims12
A method for forming a semiconductor device, comprising:
- forming a plurality of container capacitor bottom plates within a base dielectric layer;
- forming supporting collars that extend around individual capacitor bottom plates of the plurality of capacitor bottom plates, the supporting collars being interconnected with one another and having openings therein which expose the base dielectric layer;
- and
- etching the base dielectric layer through the openings in the collars to expose sidewalls of the plurality of container capacitor bottom plates, wherein subsequent to etching the base dielectric layer the supporting collars support the individual capacitor bottom plates of the plurality of container capacitor bottom plates.
A method used to form a semiconductor device, comprising:
- forming a patterned base dielectric layer over a semiconductor wafer substrate assembly;
- forming a support layer over the patterned base dielectric layer;
- forming a sacrificial layer over the support layer;
- removing a portion of the sacrificial layer, the support layer, and the patterned base dielectric layer to form a recess defined by the sacrificial layer, the support layer, and the patterned base dielectric layer;
- forming a capacitor bottom plate within the recess, the bottom plate contacting the sacrificial layer, the support layer, and the patterned base dielectric layer;
- subsequent to forming the capacitor bottom plate, removing the sacrificial layer to leave a portion of the bottom plate protruding from the support layer;
- forming masking spacers along the protruding portion of the bottom plate;
- etching the support layer using the masking spacers as a mask to form openings in the support layer;
- and
- etching the base dielectric layer through the openings in the support layer,
- wherein at least a portion of the support layer remains subsequent to the etching of the base dielectric layer through the openings in the support layer.
Dependencies are inferred from the claim text.