Structure and method to reduce drain induced barrier lowering
AssigneeAdvanced Micro Devices, Inc.
InventorsTimothy Thurgate, Nga-Ching Wong
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Abstract
Embodiments of the present invention include a method for manufacturing a transistor comprising forming a gate conductor above a semiconductor substrate; forming a lightly doped implant region within the substrate, wherein the lightly doped implant region is substantially on the source side of the transistor; and forming a counter doping implant region within the substrate, wherein the counter-doping implant region is substantially on the drain side and wherein the counter-doping reduces the net channel impurity concentration on the drain side.
Claims17
A method for reducing drain induced barrier lowering in a semiconductor having a length between a drain side and a source side comprising:
- a) forming a gate stack above a semiconductor substrate, wherein said gate stack masks an area of said drain said and an area of said source side;
- b) depositing a source side boron implant in said substrate using only said gate stack to mask said source side;
- and
- c) depositing a drain side counter-doping implant in said substrate using only said gate stack to mask said drain side wherein said drain side counter-doping implant reduces the net channel impurity concentration on said drain side which reduces drain induced barrier lowering.
A method for manufacturing a transistor comprising:
- a) forming a gate conductor above a semiconductor substrate, wherein said gate conductor masks an area of said drain said and an area of said source side;
- b) forming a lightly doped implant region within said substrate, wherein said lightly doped implant region is substantially on a source side of said transistor using only said gate conductor to mask said source side;
- and
- c) forming a counter doping implant region within said substrate, wherein said counter-doping implant region is substantially on a drain side of said transistor using only said gate conductor to mask said drain side and wherein said counter-doping reduces the net channel impurity concentration on said drain side.
Dependencies are inferred from the claim text.