Method for manufacturing semiconductor package having electrodes penetrating through semiconductor wafer

A method for manufacturing a semiconductor package, the method comprising the steps of:

• attaching a bottom surface of a semiconductor wafer to a first supporting member;
• thin-filming the semiconductor wafer after the step of attaching the bottom surface of the semiconductor wafer to the first supporting member;
• forming a through hole in the semiconductor wafer after the step of thin-filming the semiconductor wafer;
• separating the semiconductor wafer from the first supporting member;
• forming an insulating layer on at least the bottom surface of the semiconductor wafer and the inner wall of the through hole;
• forming a conducting layer underneath the semiconductor wafer, the conducting layer spanning at least the bottom of the through hole;
• and
• forming a conductive member in the through hole and in electrical contact with the conducting layer;
• wherein the conducting layer is formed by using at least one of a metal plate and metal foil as a material for the conducting layer;
• wherein the conductive member is formed by plating;
• wherein the conductive member is formed in the through hole in a manner filling the through hole.