Ion path polymers for ion-motion memory
AssigneeSpansion LLC
InventorsMatthew S. Buynoski, Richard P. Kingsborough
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Abstract
Methods and systems for improving at least one of carrier ion/charge mobility, distribution and permeability in a semiconducting polymer layer of a microelectronic device are disclosed. The methods include forming a semiconducting polymer layer containing at least one semiconducting polymer with one or more ion-complexing side-chain groups. The methods provide for the manufacture of microelectronic devices with one or more of improved carrier ion/charge mobility, distribution and permeability.
Claims20
A method for improving at least one of carrier ion/charge mobility, permeability and distribution in a semiconducting polymer layer of a polymer memory cell, comprising:
- providing a first electrode on a substrate;
- forming a passive layer over the first electrode;
- forming a semiconducting polymer layer over the passive layer, wherein the semiconducting polymer layer comprises at least one semiconducting polymer comprising one or more ion-complexing side-chain groups that reversibly binds, complexes, or accepts carrier ions/charges, the proportion of ion-complexing side-chain groups to a monomeric precursor of the semiconducting polymer ranges from about 0.01:1 to about 1:1 to facilitate carrier ion/charge mobility by providing a path for carrier ion/charge motion from one ion-complexing side-chain group to another;
- and
- providing a second electrode over the semiconducting polymer layer.
A method of fabricating an organic thin film transistor, comprising:
- depositing a gate electrode;
- forming an insulator adjacent to the gate electrode;
- forming source and drain regions;
- and
- forming a semiconducting polymer layer, wherein the semiconducting polymer layer comprises at least one semiconducting polymer with one or more ion-complexing side-chain groups that reversibly binds, complexes, or accepts ions/charges, the proportion of ion-complexing side-chain groups to a monomeric precursor of the semiconducting polymer ranges from about 0.01:1 to about 1:1 to facilitate ion/charge mobility by providing a path for ion/charge motion from one ion-complexing side-chain group to another.
A method of fabricating an organic thin film transistor, comprising:
- depositing a gate electrode;
- forming an insulator adjacent to the gate electrode;
- forming source and drain regions;
- and
- forming a semiconducting polymer layer, wherein the semiconducting polymer layer comprises semiconducting polymers randomly oriented with one or more ion-complexing side-chain groups that reversibly binds, complexes, or accepts ions/charges, the proportion of ion-complexing side-chain groups to a monomeric precursor of the semiconducting polymer ranges from about 0.01:1 to about 1:1 to facilitate ion/charge mobility by providing a path for ion/charge motion from one ion-complexing side-chain group to another.
Dependencies are inferred from the claim text.