Method of joining components
OwnerEdvard Kälvesten, Göran Stemme +1inventors
InventorsEdvard Kälvesten, Göran Stemme, Frank Niklaus
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Abstract
A method of combining components to form an integrated device, wherein the components are provided on a first sacrificial wafer, and a second non-sacrificial wafer, respectively. The sacrificial wafer carries a first plurality of components and the non-sacrificial wafer carries a second plurality of components. The wafers are bonded together with an intermediate bonding material. Optionally the sacrificial wafer is thinned to a desired level. The components of the sacrificial wafer are electrically interconnected to the component(s) on the non-sacrificial wafer. Finally, optionally the intermediate bonding material is stripped away.
Claims20
A method of combining component(s) to form an integrated device, with said components provided on a sacrificial substrate and on a non-sacrificial substrate, respectively, and with component(s) transferred from the sacrificial substrate to the non-sacrificial substrate, comprising the following steps:
- providing a non-sacrificial substrate having a first component provided thereon;
- providing the non-sacrificial substrate with electrical contact surfaces or elements, by which surfaces or elements of a second component, provided on a sacrificial substrate and to be interconnected and integrated with the first component on the non-sacrificial substrate are to be attached to the non-sacrificial wafer;
- providing a sacrificial wafer having the second component provided on one side thereof;
- coating one of the sacrificial and the non-sacrificial substrate with an adhesive layer;
- bonding the wafers together using the adhesive by bringing the wafers, carrying the first and second components together under pressure;
- removing the substrate material of the sacrificial wafer such that only the actual second component thereon remains, thereby transferring the second component to the non-sacrificial substrate;
- and
- after the second component from the sacrificial substrate has been transferred to first component on the non-sacrificial substrate, providing connections, including conductors and support legs, connecting the first component on the non-sacrificial wafer with the second component from the sacrificial substrate, using deposition, patterning and etching procedures.
A method of combining components to form an integrated device, wherein said components are provided on a first sacrificial substrate and on a second non-sacrificial substrate, respectively, comprising the following steps:
- oxidizing a sacrificial semiconductor wafer so that an oxide layer is produced on a surface thereof;
- growing a poly-silicon layer on the wafer;
- depositing a Ti/Pt layer on the poly-silicon;
- spinning photoresist on the wafer and patterning with photolithography;
- etching first the Ti/Pt and subsequently the poly-silicon down to the oxide layer;
- stripping of the photoresist to leave poly-silicon islands on the wafer surface;
- etching away the poly-silicon and the oxide layer on the backside of the wafer;
- spinning a bonding material on a non-sacrificial (ROIC) wafer;
- bonding the two wafers together under pressure;
- thinning the backside of the sacrificial silicon wafer down to the oxide layer;
- etching the oxide layer;
- spinning photoresist on the remaining bonding material for patterning and etching the bonding material to open up areas on the non-sacrificial wafer and to obtain sloped walls in the polyimide;
- depositing Ti/Pt as a contact metal between the non-sacrificial wafer and the poly-silicon islands;
- patterning and etching to create leg-structures;
- stripping the remaining bonding material, to provide a free hanging, highly thermally isolated device.
A method of combining components to form an integrated device, wherein said components are provided on a first sacrificial substrate and a second non-sacrificial substrate, respectively, comprising the following steps:
- oxidizing a sacrificial semiconductor wafer so that an oxide layer is produced on a surface thereof;
- growing a poly-silicon layer on the wafer;
- etching the poly-silicon and the oxide on the backside of the wafer so that the backside material of the wafer is silicon bulk material;
- depositing a Ti/Pt layer on the poly-silicon;
- patterning the Ti/Pt layer to form Ti/Pt structures;
- spinning a sacrificial layer of polyimide on the wafer on top of the Ti/Pt pattern and curing;
- opening up small areas of the polyimide over the Ti/Pt structures to provide sloped walls on these openings;
- patterning a second layer of Ti/Pt on the polyimide to represent leg structures of a detector;
- depositing a layer of SiN and patterning the SiN layer with the same structure as the Ti/Pt layer as a mechanical support of the leg structures;
- spinning a polyimide on a non-sacrificial wafer (ROIC);
- bonding the two wafers together applying pressure;
- thinning the backside of the poly-silicon wafer down to the oxide layer;
- spinning photoresist on the oxide layer for patterning and etching the oxide, the poly-silicon and the polyimide to open up areas on the non-sacrificial wafer;
- depositing and patterning a layer of Al to create Al-pillars, forming electrical and mechanical contact between the non-sacrificial wafer and the detector;
- etching the oxide layer with buffer HF (BHF);
- patterning and etching the poly-silicon;
- etching the SiN;
- depositing a thin layer of molybdenum-silicide on the poly-silicon using the Ti/Pt structures as a mask;
- stripping off all the remaining polyimide (both sacrificial polyimide layers), to provide a free hanging, highly thermally isolated device.
Dependencies are inferred from the claim text.