ISFETs fabrication method
AssigneeNational Yunlin University of Science and Technology
InventorsJung-Chuan Chou, Zhi Jie Chen, Shih I Liu
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Abstract
Methods for fabricating ion sensitive field effect transistors (ISFETs) with SnO2 extended gates. A SnO2 detection film is formed on a substrate by sol-gel technology to serve as an extended gate. The SnO2 detection film is electrically connected to a conductive wire, and an insulating layer is formed on the surface of the ISFET but part of the SnO2 detection film and the conductive wire are left exposed. The exposed conductive wire is electrically connected to a gate terminal of a MOS transistor.
Claims13
A fabrication method for ion sensitive field effect transistors (ISFETs) with a SnO2 extended gate, comprising:
- providing a substrate;
- forming a SnO2 detection film on the substrate by sol-gel technology to serve as an extended gate;
- electrically connecting the SnO2 detection film with a conductive wire;
- forming an insulating layer on the surface of the ISFET but exposing part of the SnO2 detection film and part of the conductive wire;
- and
- electrically connecting the exposed conductive wire and a gate terminal of a MOS transistor.
Dependencies are inferred from the claim text.