Single electron transistor manufacturing method by electro-migration of metallic nanoclusters
AssigneeSTMicroelectronics S.r.l.
InventorsDanilo Mascolo, Rossana Scaldaferri, Teresa Napolitano, Valeria Casuscelli, Luigi Occhipinti
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Abstract
A method manufactures a single electron transistor device by electro-migration of nanocluster wherein said nanoclusters are metallically passivated and forced to assembly over a lithographic patterned substrate under control of a non homogeneous electric field at room temperature. A controlled migration and the desired location of the metallic passivated nanoclusters are based on a dielectrophoretic process.
Claims35
A method for manufacturing a single electron device, comprising:
- patterning a substrate;
- providing passivated metallic nanoclusters;
- and
- electro-migrating the passivated metallic nanoclusters by forcing the passivated metallic nanoclusters to assemble over the patterned substrate under control of a non-homogeneous electric field.
A method of manufacturing a nanocluster device, comprising:
- forming conductive nanoparticles;
- and
- forming a nanocluster contact at a first electrode by forcing the conductive nanoparticles to the first electrode under control of a non-homogeneous electric field produced by a second electrode.
A method of manufacturing a single electron device, comprising:
- patterning a substrate to provide an integrated microcavity, said integrated microcavity being substantially rectangular and surrounded on four sides by metal contacts, and
- forming a nanowire within the integrated microcavity.
Dependencies are inferred from the claim text.