Flip-chip light emitting diode and fabricating method thereof
AssigneeEpistar Corporation
InventorsTzong-Liang Tsai, Chih-Sung Chang, Tzer-Perng Chen
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Abstract
A flip-chip light emitting diode and fabricating methods are disclosed. A soft transparent adhesive layer is utilized to past a transparent conductive substrate onto a light emitting diode epitaxy structure on a substrate, and the substrate is next removed entirely. Then, a mesa-etching process is performed to form a first top surface and a second top surface on the light emitting diode epitaxy structure for respectively exposing an n-type layer and a p-type layer in the light emitting diode epitaxy structure. Next, a metal reflective layer and a barrier layer are formed on the light emitting diode epitaxy structure in turn, and electrodes are finally fabricated on the barrier layer.
Claims20
A method of manufacturing a flip-chip light emitting diode, comprising:
- forming a light emitting diode epitaxy structure on a substrate, the light emitting diode epitaxy having a lower surface facing toward the substrate and an upper face opposite the lower surface;
- bonding a temporary substrate to the upper face of the light emitting diode epitaxy structure;
- removing the substrate to expose the lower surface of the light emitting diode epitaxy structure;
- bonding a transparent substrate to the lower surface;
- removing the temporary substrate;
- etching the light emitting diode epitaxy structure to partially remove the light emitting diode epitaxy structure to a depth, whereby the light emitting diode epitaxy structure includes a first upper surface and a second upper surface, the first upper surface and the second upper surface are of different doped types;
- forming a metal reflective layer on the first upper surface and the second upper surface of the light emitting diode epitaxy structure;
- and
- fabricating a first electrode and a second electrode on the metal reflective layer respectively, wherein the first upper surface of the light emitting diode epitaxy structure is underneath the first electrode and the second upper surface of the light emitting diode epitaxy structure is underneath the second electrode respectively.
A method of manufacturing a flip-chip light emitting diode, comprising:
- forming a light emitting diode die on a substrate, the light emitting diode die having a lower surface attached on the substrate:
- bonding a temporary substrate to an upper surface of the light emitting diode die;
- removing the substrate to exposure the lower surface of the light emitting diode die;
- bonding a transparent substrate to the lower surface;
- and
- removing the temporary substrate.
Dependencies are inferred from the claim text.