Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device

A method of forming a transistor, comprising:

• forming a semiconductor layer above a substrate by discharging a solution for said semiconducting layer from a nozzle in a head, the solution including a solvent and a substance of the semiconducting layer, the substance being dissolved in the solvent;
• forming a gate insulator above the semiconducting layer;
• and
• forming a gate electrode above the gate insulator,
• the forming of at least one of the gate insulator and the gate electrode being performed by discharging a liquid material from a nozzle in a head.

A method of making a device, the method comprising:

• forming a first film to form a first pattern above a substrate by discharging a solution from a nozzle in a head toward the substrate, a first component being dissolved in the solution;
• and
• forming a second film to form a second pattern above the first pattern by discharging a liquid material from a nozzle in a head toward the first pattern, a second component being included in the liquid material,
• wherein the first pattern is different from the second pattern and the first component is different from the second component.

A method of making a device, comprising:

• forming a first film, the forming of the first film including discharging of a solution from a nozzle toward a substrate, a first component for the first film being dissolved in the solution;
• and
• forming a second film, the forming of the second film including discharging of a liquid material from a nozzle toward the first film,
• a second component for the second film being included in the liquid material.

A method of making a transistor, comprising:

• forming a gate electrode on a substrate;
• forming an insulator layer on the gate electrode, at least one of the gate electrode and the insulator layer being formed by discharging a first liquid material from a nozzle of a head;
• and
• forming a semiconductor layer, the forming of the semiconductor layer including discharge of a second liquid material to the insulator layer, the forming of the semiconductor layer including evaporation of a solvent included in the second liquid material after the discharge, the second liquid material including a silane, and the second liquid material being discharged from a nozzle of a head.

A method of making a transistor, comprising:

• forming a semiconductor layer on a substrate, the forming of the semiconductor layer including discharge of a first liquid material on the substrate, the forming of the semiconductor layer including evaporation of a solvent from the first liquid material after the discharge, the first liquid material including a silane, and the first liquid material being discharged from a nozzle of a first head;
• forming an insulator layer on the semiconductor layer;
• and
• forming a gate electrode on the insulator layer, at least one of the insulator layer and the gate electrode being formed by discharging a second liquid material from a nozzle of a second head.