Process and device for growing single crystals

The process for growing single crystals, wherein crystal material is melted in a crucible and a crystal nucleus is immersed in the molten crystal material and slowly pulled out, by induction heating of an electrically conductive susceptor comprising at least one electrically conductive tube surrounding and heating the crucible, wherein the crystal formed during the pulling is kept at a temperature close to and above a melting temperature of the output material at least while the crystal is slowly pulled out, and maintaining a temperature gradient in the pulled crystal within 4 degrees K per cm.

A device for growing single crystals having a crucible to receive molten crystal material, a heating device for heating the crucible and the crystal material and a device for pulling the crystal out of the melt using an immersed crystal nucleus wherein at least one of a shield and heating element is provided surrounding the crystal during the pulling which prevents rapid cooling of the solidified crystal material in comparison with the melt and a large temperature gradient within solidified crystal material wherein the heating device comprises an electrically conductive susceptor comprising at least one electrically conductive tube surrounding and heating the crucible and an inductor is provided for inductively heating the susceptor.