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AssigneeSumitomo Mitsubishi Silicon Corporation
InventorsTakashi Shibayama, Yoshio Murakami, Takayuki Shingyoji
Estimating the term…
This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.
A silicon wafer production process comprising:
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
Gettering within semiconductor bodies: intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
Elements: silicon
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Making the insulator: on single crystalline silicon, e.g. chemical oxidation using a liquid
Term ended 6 Aug 2024 (estimated)
1. Field of the Invention
The present invention relates to a silicon wafer production process and a silicon wafer.
2. Description of the Related Art
FIG. 1 is an explanatory drawing for explaining the Voronkov theory applied in an embodiment of the silicon wafer production process according to the present invention.
FIG. 2 is a schematic drawing showing a longitudinal section of an ingot used in an embodiment of the silicon wafer production process according to the present invention.
FIG. 3 is a schematic block diagram showing a heat treatment furnace used in an embodiment of a silicon wafer production process according to the present invention.
As follows is a description of an embodiment of the silicon wafer production process and silicon wafer according to the present invention, with reference to the drawings.
When in a silicon single crystal ingot, the region where interstitial-silicon-type point defects are predominately present is designated as region I, the region where vacancy-type point defects are predominately present is designated as region V, the perfect region where there are no agglomerates of interstitial-silicon-type point defects nor agglomerates of vacancy-type point defects is designated as perfect region P, and the region where ring-shaped oxidation induced stacking faults (R-OSF) occur is designated as region R, the embodiment of the silicon wafer production process includes a step of cutting out a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P and/or a region R in which there is occurrence of R-OSF, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.
The aforementioned silicon wafer is produced by pulling out a silicon single crystal ingot from a silicon melt inside a hot zone furnace according to the Czochralski-grown method (CZ method) using a predetermined pulling velocity profile based on Voronkov theory, followed by slicing the ingot.