Method for manufacturing semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorRyoichi Matsumoto
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Abstract
A method for manufacturing a semiconductor device suppresses electric charge charged up in a semiconductor layer of an SOI substrate at the time of ion implantation, preventing a BOX layer and a gate oxide from being damaged. A field oxide film is formed on a semiconductor layer formed on a BOX layer. A conductive layer is formed on the field oxide film and a gate oxide film as well. The conductive layer made of amorphous carbon is formed by sputtering and has a thickness of 5 nm to 10 nm. B+ is implanted in the interface between the semiconductor layer and the gate oxide film by an intermediate dose ion implanter. The electric charge generated in the semiconductor layer at the time of ion implantation results in FN current, which is removed through the gate oxide film and the conductive layer.
Claims27
A method for manufacturing a semiconductor device comprising:
- forming a first insulating layer on a semiconductor substrate;
- forming a semiconductor layer on said first insulating layer;
- forming an insulating region on said first insulating layer to insulate said semiconductor layer;
- forming a conductive layer on said semiconductor layer after forming said insulating region;
- and
- implanting ions in said semiconductor layer after forming said conductive layer, thereby forming an active region within said semiconductor layer.
Dependencies are inferred from the claim text.