Method for making an OPC mask and an OPC mask manufactured using the same

An Optical Proximity Correction (OPC) mask for a photolithography process, the OPC mask comprising:

• a mask body having a substantially circular shape and coated with a light-shielding layer;
• a desired pattern disposed on the light-shielding layer;
• and
• an amended pattern disposed on the light-shielding layer and around the desired pattern in a pattern area where a Kennel effect occurs, a critical dimension of the amended pattern corresponding to a required size of an electron beam, the required size of the electron beam calculated according to coefficients obtained in consideration of the Kennel effect.

An apparatus for manufacturing an OPC mask with an electron beam, the apparatus comprising:

• a holder structured to support a mask body;
• an electron beam illuminator disposed on a central upper portion of the holder, wherein the electron beam illuminator includes an electron beam source structured to generate the electron beam that illuminates the mask body, an electron beam focusing unit structured to focus the electron beam, and an electron beam controlling unit to defocus the electron beam by changing a depth of focus of the electron beam;
• and
• a controller mounted on the electron beam illuminator, the controller structured to calculate a required size of the electron beam according to coefficients obtained in consideration of the Kennel Effect the required size of the electron beam corresponding to a critical dimension of an amended pattern formed in consideration of the Kennel Effect, the controller further structured to command the electron beam controlling unit based on the calculation result to change the size of the electron beam.

A method for manufacturing an optical proximity correction (OPC) mask with an electron beam comprising:

• placing a mask on a holder;
• and
• forming a mask pattern for a photolithography process on the mask by illuminating the mask with an electron beam, wherein forming a mask pattern further comprises
• forming a desired pattern on the mask;
• and
• forming an amended pattern in consideration of a Kennel Effect by defocusing the electron beam in a portion of the desired pattern where the Kennel Effect occurs so that the size of the electron beam is equivalent to a critical dimension of a pattern formed in the pattern area in which the Kennel Effect occurs.

An apparatus for manufacturing an OPC mask with an electron beam, the apparatus comprising:

• a holder on which a mask body is placed;
• an electron beam illuminator formed on a central upper portion of the holder, wherein the electron beam illuminator comprises an electron beam source to generate the electron beam that illuminates the mask body, an electron beam focusing unit to focus the electron beam, an electron beam controlling unit to defocus the electron beam by changing a depth of focus of the electron beam;
• and
• a controller mounted on the electron beam illuminator that calculates a required size of the electron beam according to coefficients obtained in consideration of the Kennel effect and commands the electron beam controlling unit based on the calculation result, wherein the required size of the electron beam corresponds to a critical dimension of an amended pattern formed in consideration of the Kennel effect.