Reference cells for TCCT based memory cells

A memory array comprising:

• a memory cell having a state and configured to generate a first current on a first bit line;
• a circuit configured to generate a reference voltage;
• a reference cell configured to receive the reference voltage and to generate a second current on a second bit line;
• and
• means for determining the state of the memory cell by comparing the first current to the second current;
• wherein the reference cell includes
• an NDR device disposed adjacent to the second word line, and
• a pass transistor having a gate with the reference voltage applied thereto.

A memory array comprising:

• a first bit line;
• a second bit line;
• a first word line;
• a second word line;
• a TCCT based memory cell including
• a first NDR device disposed adjacent to the second word line and having
• a first end having a first voltage applied thereto, and
• a second end;
• a first pass transistor having
• a source coupled to the second end of the first NDR device,
• a drain coupled to the first bit line, and
• a gate coupled to the first word line;
• and
• a reference cell including
• a second NDR device disposed adjacent to the second word line and having
• a first end having the first voltage applied thereto, and
• a second end;
• a second pass transistor having
• a source coupled to the second end of the second NDR device,
• a drain, and
• a gate coupled to the first word line;
• a current reduction element coupled between the second bit line and the drain of the second pass transistor;
• and
• means for determining a state of the TCCT based memory cell by comparing a first current on the first bit line and a second current on the second bit line.

A memory device, comprising:

• at least one memory array including
• at least one TCCT based memory cell;
• at least one reference cell;
• and
• a sense amplifier configured to
• receive a memory cell current produced by the at least one TCCT based memory cell,
• receive a reference cell current produced by the at least one reference cell, and
• compare the memory cell current with the reference cell current to determine a state of the at least one TCCT based memory cell.