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US 7,064,976 B2Granted
Method of operating a stacked spin based memory
AssigneeSpin Op Corporation
InventorMark B. Johnson
Life of this patent
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Abstract
A method of operating a spin based memory cell stacked architecture is provided. The cells are comprised of magnetic spin storage elements stacked on top of each other on a silicon substrate, as well as one or two semiconductor FET isolation elements.
Claims20
A method of operating a multi-bit magnetoelectronic memory device comprising:
- providing a stacked arrangement of separate magnetic spin based memory elements over a semiconductor substrate;
- wherein each of said magnetic spin based memory elements stores at least one bit of data in the form of an electron spin state associated with a ferromagnetic layer, so that a plurality of separate data bits can be stored in said stacked arrangement of separate magnetic memory elements in the form of a plurality of separate electron spin states;
- addressing and reading said stacked arrangement of separate magnetic spin based memory elements so that said plurality of separate electron spin states can be read out at the same time.
A method of providing a multi-layer magnetoelectronic memory device comprising:
- providing a plurality of separate ferromagnetic layers in a stacked arrangement situated on a silicon based substrate;
- wherein each of said plurality of separate ferromagnetic layers stores at least one bit of data in the form of an electron spin state, so that a plurality of data bits can be stored in said stacked arrangement;
- providing at least one low transmission barrier layer in said stacked arrangement;
- reading all of said plurality of data bits at the same time.
1 more element
A method of operating a multi-layer magnetoelectronic memory device comprising:
- providing a plurality of separate magnetic spin based memory elements situated in a stacked arrangement on a semiconductor substrate;
- wherein said each of said plurality of separate magnetic spin based memory elements includes a plurality of separate corresponding storage layers;
- providing a plurality of separate insulating layers interposed between said separate corresponding storage layers for insulating said separate magnetic spin based memory elements;
- wherein each magnetic spin based memory element stores a bit of data in the form of an electron spin state associated with a ferromagnetic layer, so that a plurality of data bits can be stored in said magnetic memory elements in the form of a plurality of separate electron spin states;
- further wherein each magnetic spin based memory element includes a unique transimpedance compared to other magnetic spin based memory elements in said stack arrangement;
- reading all of said plurality of separate magnetic spin based memory elements at the same time in said stacked arrangement.
3 more elements
Dependencies are inferred from the claim text.