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US 7,064,975 B2Granted
Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorYoshihisa Iwata
Life of this patent
Estimating the term…
Abstract
A read block is formed from a plurality of TMR elements stacked in the vertical direction. One terminal of each TMR element in the read block is connected to a source line through a read select switch. The source line extends in the Y-direction and is connected to a ground point through a column select switch. The other terminal of each TMR element is independently connected to a corresponding one of read/write bit lines. Each read/write bit line extends in the Y-direction and is connected to a read circuit through the column select switch.
Claims24
A magnetic random access memory comprising:
- memory cells which are stacked at stages, using a magnetoresistive effect;
- a read select transistor which commonly connects to one terminal of each of said memory cells;
- bit lines which are arranged in correspondence with said memory cells and extend in a first direction;
- a read word line which is connected to a source/drain of said read select transistor and extends in a second direction perpendicular to the first direction;
- and
- a decode line which is connected to a gate of said read select transistor and extends in the first direction,
- wherein each of said memory cells has the other terminal independently connected to one of said bit lines, said bit lines are electrically isolated from each other in a read mode, the data is independently written into the memory cells, and an imaginary line extending from a source of the read select transistor to a drain thereof is orthogonal to a read word line connected to the gate of the read select transistor.
4 more elements
Dependencies are inferred from the claim text.